Samsung Electronics going to develop a high-capacity dynamic random-access memory (DRAM) module. DDR5 is the next-generation standard for DRAM where the product delivers more than twice the performance of DDR4 at up to 7,200 megabits per second, which is speed to process two 30GB ultra-high definition movies in one second. Samsung said that “HKMG technology, which has been traditionally used in logic chips, leverages a high dielectric material in the insulation layer to reduce the leakage of current.”
The HKMG process was accepted in Samsung’s GDDR6 memory in 2018 before it was enlarged to DDR5 memory. Its DDR5 module with HKMG solution consumes 13 percent less power than products using existing process technology. It is suitable for data centers seeking energy efficiency.
Samsung also said that “By bringing this type of process innovation to DRAM manufacturing, we can offer our customers high-performance, yet energy-efficient, memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond. It also applied through-silicon via (TSV) technology for the latest DDR5 memory to stack eight layers of 16-gigabit DRAM chips for the industry’s top capacity of 512GB.
The company used the TSV solution in DRAM chips in 2014 when server modules with capacities up to 256GB. The sampling of the different variations of its DDR5 memory products to customers for verification, closely working with partners, including Intel Corp., to expand its use.
